tsm3900d 20v dual n - channel mosfet 1 / 6 version: b07 sot - 26 features advance trench process technology high density cell design for ultra low on - resistance application load switch pa switch ordering information part no. package packing tsm3900dcx6 rf sot - 26 t&r absolu te maximum rating ( ta = 25 ? unless otherwise noted ) parameter symbol limit unit drain - source voltage v ds 20 v gate - source voltage v gs 8 v continuous drain current i d 2 a pulsed drain current i dm 8 a continuous source current (diode conduction) a,b i s 1.6 a ta = 25 ? 2.0 maximum power dissipation ta = 70 ? p d 1.3 w operating junction temperature t j +150 o c operating junction and storage temperature range t j , t stg - 55 to +150 o c thermal performance parameter symbol limit unit junction to case t hermal resistance r? jc 30 o c/w junction to ambient thermal resistance (pcb mounted) r? ja 80 o c/w note s : a. pulse width limited by the maximum junction temperature b. surface mounted on fr4 board, t 5 sec. product summary v d s (v) r ds(on) (m) i d (a) 55 @ v gs = 4.5v 2.0 70 @ v gs = 2.5v 1.5 20 110 @ v gs = 1.8v 1.0 block diagram dual n - channel mosfet pin definition : 1. gate 1 6. drain 1 2. source 2 5. source 1 3. gate 2 4. drain 2
tsm3900d 20v dual n - channel mosfet 2 / 6 version: b07 electrical specifications parameter conditions symbol min ty p max u nit static drain - source breakdown voltage v gs = 0 v, i d = 250ua bv dss 20 -- -- v gate threshold voltage v ds = v gs , i d = 250ua v gs(th) 0.6 5 0.95 1.2 v gate body leakage v gs = 8v, v ds = 0v i gss -- -- 100 na zero gate voltage drain current v ds = 16v, v gs = 0v i dss -- -- 1.0 ua on - state drain current v ds 5v, v gs = 4.5v i d(on) 5 -- -- a v gs = 4.5v, i d = 2.0a -- 45 55 v gs = 2.5v, i d = 1.5a -- 50 70 drain - source on - state resistance v gs = 1.8v, i d = 1.0a r ds(on) -- 80 110 m forward transconductance v ds = 5v, i d = 2.4a g fs -- 5 -- s diode forward voltage i s = 1.6a, v gs = 0v v sd -- 0.79 1.1 v dynamic b total gate charge q g -- 3.69 -- gate - source charge q gs -- 0.70 -- gate - drain charge v ds = 10v, i d = 2.4a, v gs = 4.5v q gd -- 1.06 -- nc input capacitance c i ss -- 427.12 -- output capacitance c oss -- 80.56 -- reverse transfer capacitance v ds = 10v, v gs = 0v, f = 1.0mhz c rss -- 57 -- pf switching c turn - on delay time t d(on) -- 6.16 -- turn - on rise time t r -- 7.56 -- turn - off delay time t d(off) -- 16.61 -- turn - off fall time v dd = 10v, r l = 10 , i d = 1a, v gen = 4.5v, r g = 6 t f -- 4.07 -- ns notes: a. pulse test: pw 300 s, d u ty cycle 2% b. for design aid only, not subject to production testing. b. switching time is essentially independent of operating temperature.
tsm3900d 20v dual n - channel mosfet 3 / 6 version: b07 electrical characteristics curve ( ta = 25 ? , unless otherwise noted ) output characteristics transfer characteristics on - resistance v s. drain current gate charge on - resistance vs. junction temperature source - drain diode forward voltage
tsm3900d 20v dual n - channel mosfet 4 / 6 version: b07 electrical characteristics curve ( ta = 25 ? , unless otherwise noted ) on - resistance vs. gate - source voltage threshold voltage single pulse power normalized thermal transient impedance, junction - to - ambient
tsm3900d 20v dual n - channel mosfet 5 / 6 version: b07 sot - 26 mechanical drawing marking diagram 0d = device code y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct , k =nov, l =dec) l = lot code sot - 26 dimension millimeters inches dim min typ max min typ max a 0.95 bsc 0.0374 bsc a1 1.9 bsc 0.0748 bsc b 2.60 2.80 3.00 0.1024 0.1102 0.1181 c 1.40 1.50 1.70 0.0551 0.0591 0.0669 d 2.80 2.90 3.10 0.1101 0.1142 0.1220 e 1.00 1.10 1.20 0.0394 0.0433 0.0472 f 0.00 -- 0.10 0.00 0.0039 g 0.35 0.40 0.50 0.0138 0.0157 0.0197 h 0.10 0.15 0.20 0.0039 0.0059 0.0079 i 0. 30 -- 0.60 0.0118 -- 0.0236 j 5 -- 10 5 -- 10
tsm3900d 20v dual n - channel mosfet 6 / 6 version: b07 notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf, assumes no responsibility or liability for any err ors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied, to any intellectual property rights is granted by this document. except as provided in tsc s terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringem ent of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life - saving, or life - sustaining applications. customers using or selling these products for use in such applications do so a t their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale.
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